NTE2349 (npn) & nte2350 (pnp) silicon darlington transistors high current, general purpose description: the NTE2349 (npn) and nte2350 (pnp) are silicon complementary darlington transistors in a to3 type package designed for use as output devices in general purpose amplifier applications. features: high dc current gain: h fe = 1000 (min) @ i c = 25a h fe = 400 (min) @ i c = 50a diode protection to rated i c monolithic construction w /built?in base?emitter shunt resistor junction temperature to +200 c absolute maximum ratings: collector?emitter voltage, v ceo 120v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector?base voltage, v cb 120v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter?base voltage, v eb 5v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector current, i c continuous 50a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak 100a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous base current, i b 2a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total power dissipation (t c = +25 c), p d 300w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate above 25 c @ t c = +100 c 1.71w/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ?55 to +200 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?55 to +200 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction?to?case, r thjc 0.584 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature (during soldering, 10sec max), t l +275 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . electrical characteristics: (t c = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector?emitter breakdown voltage v (br)ceo i c = 100ma, i b = 0 120 ? ? v collector?emitter leakage current i cer v ce = 120v, r be = 1k ? ? ? 2 ma v ce = 120v, r be = 1k ? , t c = +150 c ? ? 10 ma i ceo v ce = 50v, i b = 0 ? ? 2 ma emitter cutoff current i ebo v be = 5v, i c = 0 ? ? 2 ma
electrical characteristics (cont?d): (t c = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit on characteristics (note 1) dc current gain h fe i c = 25a, v ce = 5v 1000 ? 18000 i c = 50a, v ce = 5v 400 ? ? collector ? emitter saturation voltage v ce(sat) i c = 25a, i b = 250ma ? ? 2.5 v i c = 50a, i b = 500ma ? ? 3.5 v base ? emitter saturation voltage v be(sat) i c = 25a, i b = 200ma ? ? 3.0 v i c = 50a, i b = 300ma ? ? 4.5 v note 1 . pulse test: pulse width 300 s, duty cycle 2%. schematic diagram npn pnp b c e b c e 1.187 (30.16) .875 (22.2) dia max .665 (16.9) .430 (10.92) seating plane .040 (1.02) .312 (7.93) min .135 (3.45) max .350 (8.89) emitter collector/case base .215 (5.45) .525 (13.35) r max .156 (3.96) dia (2 holes) .188 (4.8) r max
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